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| Transys Electronics LIMITED TO-220 Plastic-Encapsulated Transistors MJE3055 FEATURES Power dissipation PCM: 2 W (Tamb=25) TRANSISTOR (NPN) TO-220 1. BASE 2. COLLECTOR 3. EMITTER Collector current 10 A ICM: Collector-base voltage 70 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(1) DC current gain hFE(2) VCE=4V, IC=10A IC=4A, IB=400mA Collector-emitter saturation voltage VCE(sat) IC=10A, IB=3.3A Base-emitter voltage Transition frequency VBE VCE=4V, IC=4A VCE=10V, IC=500mA 123 unless otherwise specified) Test conditions MIN TYP MAX UNIT V V V Ic=1mA, IE=0 Ic=200mA, IB=0 IE=1mA, IC=0 VCB=70V, IE=0 VCE=30V, IE=0 VEB=5V, IC=0 VCE=4V, IC=4A 70 60 5 1 0.7 5 20 5 1.1 8 1.8 2 100 mA mA mA V V V MHz fT |
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